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Scientists create black arsenic visible infrared photodetectorsNow, a research group has designed a dual-band photodetector based on black phosphorus ... the prepared device is an n-type depletion-mode FET and exhibits good Ohmic contact.
A group of Carnegie Mellon University researchers recently devised a method allowing them to create large amounts of a ...
Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...
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