NoMIS Power Corporation unveiled its first range of advanced 1200 V SiC MOSFETs at ICSCRM 2024, in Raleigh, North Carolina earlier this month. The SiC MOSFET technology will also be used an upcoming ...

The US Department of Commerce and Wolfspeed have signed a non-binding preliminary memorandum of terms (PMT) for up to $750 ...

Cambridge GaN Devices (CGD) has announced that it's exhibiting at the IEEE Energy Conversion Congress and Expo (October 21 ...

Compound Semiconductor™ is an Angel Business Communications publication.

Infineon Technologies is introducing the HybridPACK Drive G2 Fusion, establishing a new power module standard for traction inverters in the e-mobility sector.

Instrument Systems GmbH, the Munich-based manufacturer of solutions for light measurement, has appointed Daniel Winters as the new VP R&D.

Navitas Semiconductor has announced GaNSlim, a new generation of integrated GaN power ICs designed to simplify and speed the ...

In his address, Gustav Kalbe said: “You can see how ubiquitous applications for integrated photonics are becoming. They’re ...

Navitas Semiconductor's high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) ...

Researchers from Wuhan University in China have unveiled a new approach to boost the performance of AlGaN-based ...

A 48V/180A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design adopts Innoscience’s new 100V VGaN product, the INV100FQ030A, which is ...