The Japan semiconductor diode market reached a valuation of USD 1,096.0 million in 2024 and is projected to grow steadily, reaching approximately USD 1,345.0 million by 2033. This growth reflects a ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Until now, power design engineers often require an external Schottky diode in parallel with the GaN transistor ... DC-DC ...

The new CoolGaN Transistor G5 from Infineon significantly reduces these challenges by offering a GaN transistor with an ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

Infineon introduces first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.

The latest package in Vishay’s Power DFN family, the DFN33A features a compact 3.3 mm by 3.3 mm footprint and an extremely low typical height of 0.88 mm, allowing the Vishay General Semiconductor ...

Diodes Incorporated’s DIOD share price has dipped by 8.02%, which has investors questioning if this is right time to buy.

April 16, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 27 standard and Trench MOS Barrier Schottky (TMBS ®) surface-mount rectifiers in the low profile ...

The new device greatly lessens these challenges by providing a GaN transistor with an integrated Schottky diode appropriate for usage in server and telecom IBCs, DC-DC converters, synchronous ...