Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Accordany to the company, the family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the ...

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

The latest package in Vishay’s Power DFN family, the DFN33A features a compact 3.3 mm by 3.3 mm footprint and an extremely low typical height of 0.88 mm, allowing the Vishay General Semiconductor ...